- Molecular Formula: GaP
- CasNo.: 12063-98-8
- Melting point: 1480 °C
- Appearance:
- ProductionCapacity:
- Purity:
- Packing:
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Product Details:
Factory Sells Quality Factory Supply 99.999% Gallium Phosphide 12063-98-8 with Efficient Shipping
- Molecular Formula:GaP
- Molecular Weight:100.697
- Melting Point:1480 °C
- Refractive Index:2.9
- Flash Point:230 °F
- PSA：0.00000
- Density:4.13 g/cm3
- LogP:0.70540
GALLIUM PHOSPHIDE(Cas 12063-98-8) Usage
Physical properties
Pale orange to yellow transparent cubic crystals or long whiskers; lattice constant 5.450?; density 4.138 g/cm3; melts at 1,477°C; dielectric constant 8.4; electroluminescent in visible light.
Preparation
The compound is prepared by vapor phase reaction of gallium suboxide, Ga2O and phosphorus. It is produced in polycrystalline form or as single crystals or whiskers in high purity grade for use in semiconducting devices.
InChI:InChI=1/Ga.P/q+3;-3
12063-98-8 Relevant articles
New pnictinogallanes [H2GaE(SiMe3)2]3 (E = P, As) - Formation, structural characterization, and thermal decomposition to afford nanocrystalline GaP and GaAs
Janik, Jerzy F.
, p. 532 - 537 (1998)
The new compounds [H2GaE(SiMe3)2]3 (E = ...
High filling fraction gallium phosphide inverse opals by atomic layer deposition
Graugnard,Chawla,Lorang,Summers
, (2006)
High filling fraction gallium phosphide ...
Thickness inhomogenities in the organometallic chemical vapor deposition of GaP
Liu,Aspnes
, (2008)
We analyze exponential lateral-thickness...
Mild benzene-thermal route to GaP nanorods and nanospheres
Gao, Shanmin,Xie, Yi,Lu, Jun,Du, Guoan,He, Wei,Cui, Deliang,Huang, Baibiao,Jiang, Minhua
, p. 1850 - 1854 (2002)
GaP nanorods and nanospheres were synthe...
Aqueous synthesis of III-V semiconductor GaP and InP exhibiting pronounced quantum confinement
Gao, Shanmin,Lu, Jun,Chen, Nan,Zhao, Yan,Xie, Yi
, p. 3064 - 3065 (2002)
A mild aqueous synthesis route was succe...
Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1-x, and GaPxSb1-x. X-ray crystal structures of [Et2GaP(SiMe3)2]2, (Me3Si)2P[μ-GaEt2]2As(SiMe 3)2
Jouet, Richard J.,Wells, Richard L.,Rheingold, Arnold L.,Incarvito, Christopher D.
, p. 191 - 198 (2000)
The 1:1 mole ratio reaction of Et2GaCl w...
Synthesis, characterization, and thermal decomposition of [Cl2GaP(SiMe3)2]2, a potential precursor to gallium phosphide
Wells, Richard L.,Self, Mark F.,McPhail, Andrew T.,Aubuchon, Steven R.,Woudenberg, Richard C.,Jasinski, Jerry P.
, p. 2832 - 2834 (1993)
[Cl2GaP(SiMe3)2]2 (1) has been prepared ...
Surfactant-imposed interference in the optical characterization of GaP nanocrystals
Furis, Madalina,Sahoo, Yudhisthira,MacRae, David J.,Manciu, Felicia S.,Cartwright, Alexander N.,Prasad, Paras N.
, p. 11622 - 11625 (2003)
We report on the complications in optica...
An analogous solution-liquid-solid (ASLS) growth route to InP hollow spheres and a honeycomb-like macroporous framework
Zheng, Xiuwen,Liu, Changzeng,Xie, Yi
, p. 2364 - 2369 (2006)
Hollow spheres and a honeycomb-like macr...
Synthesis and optical properties of Gallium phosphide nanotubes
Wu, Qiang,Hu, Zheng,Liu, Chun,Wang, Xizhang,Chen, Yi,Lu, Yinong
, p. 19719 - 19722 (2005)
Gallium phosphide nanotubes with zinc bl...
A mild reduction-phosphidation approach to nanocrystalline GaP
Chen, Luyang,Luo, Tao,Huang, Mingxing,Gu, Yunle,Shi, Liang,Qian, Yitai
, p. 667 - 671 (2004)
Nanocrystalline gallium phosphide (GaP) ...
The growth process, stability of GaP nanocrystals and formation of Ga3P nanocrystals under solvothermal conditions in benzene
Gao, Shanmin,Lu, Jun,Zhao, Yan,Chen, Nan,Xie, Yi
, p. 1822 - 1827 (2003)
The growth process, stability of GaP nan...
The synthesis of metal phosphides: Reduction of oxide precursors in a hydrogen plasma
Wang, Anjie,Qin, Minglei,Guan, Jie,Wang, Li,Guo, Hongchen,Li, Xiang,Wang, Yao,Prins, Roel,Hu, Yongkang
, p. 6052 - 6054 (2008)
(Equation Presented) A NiPpy phosphide s...
Mass transport model for semiconductor nanowire growth
Johansson, Jonas,Svensson, C. Patrik T.,Maì?rtensson, Thomas,Samuelson, Lars,Seifert, Werner
, p. 13567 - 13571 (2005)
We present a mass transport model based ...
Chemical vapor transport of solid solutions. 15. Chemical vapor transport of GaP and of mixed crystals in the system ZnS/GaP
Locmelis,Binnewies
, p. 1308 - 1312 (2004)
By means of CVT methods using iodine as ...
A developed Ullmann reaction to III-V semiconductor nanocrystals in sealed vacuum tubes
Wang, Junli,Yang, Qing
, p. 6060 - 6066 (2008)
Group III-V (13-15, III = Ga, In, and V ...
Synthesis and optical study of crystalline GaP nanoflowers
Liu,Bando,Tang,Golberg,Xie,Sekiguchi
, p. 1 - 3 (2005)
GaP nanoflowers composed of numerous GaP...
Sterically induced shape and crystalline phase control of GaP nanocrystals
Kim, Yong-Ho,Jun, Young-wook,Jun, Byung-Ho,Lee, Sang-Min,Cheon, Jinwoo
, p. 13656 - 13657 (2002)
We demonstrate a novel synthetic scheme ...
Origin of photoluminescence from colloidal gallium phosphide nanocrystals synthesized via a hot-injection method
Kim, Sungwoo,Lee, Kangha,Kim, Sejin,Kwon, O.-Pil,Heo, Jin Hyuk,Im, Sang Hyuk,Jeong, Sohee,Lee, Doh C.,Kim, Sang-Wook
, p. 2466 - 2469 (2015/02/19)
In this work, photoluminescence from col...
Synthesis and structural characterization of the ternary Zintl phases AE3Al2Pn4 and AE3Ga 2Pn4 (AE=Ca, Sr, Ba, Eu; Pn=P, As)
He, Hua,Tyson, Chauntae,Saito, Maia,Bobev, Svilen
, p. 59 - 65 (2012/04/10)
Ten new ternary phosphides and arsenides...
Study of GaP single crystal layers grown on GaN by MOCVD
Li, Shuti,Liu, Chao,Ye, Guoguang,Xiao, Guowei,Zhou, Yugang,et al.
, p. 1942 - 1945 (2011/11/11)
The performance of GaN based devices cou...
BaGa2Pn2 (Pn = P, As): New semiconducting phosphides and arsenides with layered structures
He, Hua,Stearrett, Ryan,Nowak, Edmund R.,Bobev, Svilen
, p. 7935 - 7940 (2011/01/07)
Reported are the synthesis, the structur...
12063-98-8 Process route
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{Me2Ga(μ-t-Bu2P)}2
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- 12063-98-8
gallium phosphide
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- 34557-54-5,27936-85-2
methane
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- 75-28-5,40921-86-6
Isobutane
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- 115-11-7,15220-85-6
isobutene
ConditionsConditions Yield In neat (no solvent); pyrolysis under vacuum;;-
- 7440-55-3
gallium
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niobium
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phosphorus
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- 7440-39-3
barium
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- 12063-98-8
gallium phosphide
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barium phosphide
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- 12034-66-1
niobium monophosphide
ConditionsConditions Yield In neat (no solvent, solid phase); react. Ba:Ga:P (1:2:2) in sealed Nb tube;1% 12063-98-8 Upstream products
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7803-51-2
phosphan
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7440-55-3
gallium
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7719-12-2
phosphorus trichloride
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140194-63-4
tris(di-tert-butyphosphino)gallane
12063-98-8 Downstream products
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15091-79-9
gallium(I) ion
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12032-78-9
manganese phosphide
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14452-66-5
phosporus oxide
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12164-97-5
phosphorus dioxide